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IDW20G65C5XKSA1

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Description: DIODE SIL CARB 650V 20A TO247-3

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ハイライト:
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
210 µA @ 650 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 20 A
Package:
Tube
Series:
CoolSiC™+
Capacitance @ Vr, F:
590pF @ 1V, 1MHz
Supplier Device Package:
PG-TO247-3-41
Reverse Recovery Time (trr):
0 ns
Mfr:
Infineon Technologies
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
TO-247-3
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
20A
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
IDW20G65
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
210 µA @ 650 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 20 A
Package:
Tube
Series:
CoolSiC™+
Capacitance @ Vr, F:
590pF @ 1V, 1MHz
Supplier Device Package:
PG-TO247-3-41
Reverse Recovery Time (trr):
0 ns
Mfr:
Infineon Technologies
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
TO-247-3
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
20A
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
IDW20G65
IDW20G65C5XKSA1
ダイオード 650 V 20A 透孔 PG-TO247-3-41