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CDBDSC10650-G

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Description: DIODE SIL CARBIDE 650V 10A DPAK

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ハイライト:
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
100 µA @ 650 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 10 A
Package:
Tube
Series:
-
Capacitance @ Vr, F:
690pF @ 0V, 1MHz
Supplier Device Package:
DPAK
Reverse Recovery Time (trr):
0 ns
Mfr:
Comchip Technology
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
10A
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
CDBDSC10650
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
100 µA @ 650 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 10 A
Package:
Tube
Series:
-
Capacitance @ Vr, F:
690pF @ 0V, 1MHz
Supplier Device Package:
DPAK
Reverse Recovery Time (trr):
0 ns
Mfr:
Comchip Technology
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
10A
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
CDBDSC10650
CDBDSC10650-G
ディオード 650 V 10A 表面マウント DPAK